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中南大学学报(自然科学版)

Journal of Central South University

第46卷    第6期    总第250期    2015年6月

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文章编号:1672-7207(2015)06-2014-06
溶胶-凝胶后硫化法制备铜锌锡硫薄膜太阳电池
韩自力1,苏正华1,孙凯文1,刘芳洋1, 2,赖延清1,李劼1,刘业翔1

(1. 中南大学 冶金与环境学院,湖南 长沙,410083;
2. 新南威尔士大学 光伏与可再生能源工程学院,悉尼,2052
)

摘 要: 在560 ℃的硫气氛中退火处理溶胶-凝胶法制备的薄膜前躯体,制备太阳电池光吸收层铜锌锡硫(CZTS)薄膜。采用X线能量色散谱、扫描电镜、X线衍射、拉曼光谱和紫外-可见-近红外分光光度计等对薄膜进行表征。研究结果表明:制备的CZTS薄膜为贫铜富锌成分,呈现锌黄锡矿结构;薄膜禁带宽度约为1.50 eV,在可见光区域内光吸收系数达到104 cm-1;制作的结构为Ag/ZnO:Al/i-ZnO/CdS/CZTS/Mo/SLG的薄膜太阳电池器件的电池开路电压、短路电流密度、填充因子和光电转换效率分别为658 mV,16.75 mA/cm2,0.47和5.18%,表明溶胶-凝胶法有望成为制备廉价高效的CZTS薄膜太阳电池的有效途径。

 

关键字: CZTS;溶胶-凝胶法;硫化退火;薄膜太阳电池

Cu2ZnSnS4 solar cells prepared with sulphurized sol-gel deposited precursors
HAN Zili1, SU Zhenghua1, SUN Kaiwen1, LIU Fangyang1, 2, LAI Yanqing1, LI Jie1, LIU Yexiang1

1. School of Metallurgy and Environment, Central South University, Changsha 410083, China;
2. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia

Abstract:The solar cell light absorber Cu2ZnSnS4(CZTS) thin films were prepared by annealing precursor thin film in a sulfur atmosphere at 560 ℃ based on sol-gel method. The annealed films were characterized by energy dispersive X-ray spectroscopy, scanning electron microscopy, X-ray diffraction, Raman scattering and UV-vis spectroscopy. The results show that the prepared CZTS thin films have a pure kesterite structure with Cu-poor and Zn-rich. The band gap of CZTS films is about1.50 eV, and the optical absorption coefficient in visible light range is 104 cm-1.Thin film solar cells with a structure of Ag/ZnO:Al/i-ZnO/CdS/CZTS/Mo/SLG are tentatively fabricated. The solar cell shows an open-circuit voltage of 658 mV, a short-circuit current density of 16.75 mA/cm2, a fill factor of 0.47 and an efficiency of 5.18%,which demonstrates that the sol-gel technique is a successful method of preparing cheap thin film solar cells of CZTS.

 

Key words: CZTS; sol-gel; sulfurizing; thin film solar cell

中南大学学报(自然科学版)
  ISSN 1672-7207
CN 43-1426/N
ZDXZAC
中南大学学报(英文版)
  ISSN 2095-2899
CN 43-1516/TB
JCSTFT
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