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中南大学学报(英文版)

Journal of Central South University

Vol. 26    No. 10    October 2019

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Effects of ratio of hydrogen flow on microstructure of hydrogenated microcrystalline silicon films deposited by magnetron sputtering at 100 °C
WANG Lin-qing(王林青)1, 2, ZHOU Yong-tao(周永涛)3, 4, WANG Jun-jun(王军军)3, 4, LIU Xue-qin(刘雪芹)3, 4

1. School of Science, Chongqing University of Technology, Chongqing 400054, China;
2. Chongqing Key Laboratory of Green Energy Materials Technology and Systems,
Chongqing 400054, China
3. College of Materials Science and Engineering, Chongqing University of Technology,
Chongqing 400054, China;
4. Chongqing Collaborative Innovation Center for Brake Tribological Materials, Chongqing 400054, China

Abstract:Hydrogenated microcrystalline silicon (μc-Si:H) films were prepared on glass and silicon substrates by radio frequency magnetron sputtering at 100 °C using a mixture of argon (Ar) and hydrogen (H2) gasses as precursor gas. The effects of the ratio of hydrogen flow (H2/(Ar+H2)%)) on the microstructure were evaluated. Results show that the microstructure, bonding structure, and surface morphology of the μc-Si:H films can be tailored based on the ratio of hydrogen flow. An amorphous to crystalline phase transition occurred when the ratio of hydrogen flow increased up to 50%. The crystallinity increased and tended to stabilize with the increase in ratio of hydrogen flow from 40% to 70%. The surface roughness of thin films increased, and total hydrogen content decreased as the ratio of hydrogen flow increased. All μc-Si:H films have a preferred (111) orientation, independent of the ratio of hydrogen flow. And the μc-Si:H films had a dense structure, which shows their excellent resistance to post-oxidation.

 

Key words: hydrogenated microcrystalline silicon films; radio frequency magnetron sputtering; ratio of hydrogen flow; low temperature; microstructure

中南大学学报(自然科学版)
  ISSN 1672-7207
CN 43-1426/N
ZDXZAC
中南大学学报(英文版)
  ISSN 2095-2899
CN 43-1516/TB
JCSTFT
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